SX1 set

Near-Field Probes 1 GHz up to 10 GHz

The SX1 set consists of three passive near-field probes for measuring E-fields and magnetic fields with a high clock frequency from 1 GHz to 10 GHz on electronic assemblies and ICs during the development stage. The different probe heads of the SX1 set allow for measurements very close to the electronic assemblies, e.g. on single IC pins, conducting paths, components, and connectors, in order to localize interference sources. An electronic assembly’s field orientation and field distribution can be detected through specific use of the near-field probe. The near-field probes are small and handy. They have a current attenuating sheath and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input.

High clock rates, e.g. above 3 GHz approach 10 GHz already at the 3rd harmonic. These harmonics are decoupled from RF sources on the board, e.g. conductor sections, ICs and other components. Other structural parts of the assembly can be excited to oscillate and lead to interference emission.
With the high internal base frequency of today’s assemblies, the measurement of harmonic frequency multiples is an important step towards an EMC-compliant assembly.

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SX-R 20-1 set

Near-Field Probe 1 GHz up to 20 GHz

The SX-R 20-1 set consists of a passive near-field probe for the measurement of high-frequency magnetic fields up to 20 GHz during development. The probe head of the SX-R 20-1 allows measurements close to the electronic assembly, e.g. on individual IC pins, conductors, components and their connections to locate sources of interference. The field orientation and field distribution on the electronic assembly can be determined by guiding the near-field probe accordingly. The near-field probe is small and handy. It has a sheath current attenuation and is electrically shielded.
The near-field probe is connected to a spectrum analyzer or an oscilloscope with 50 Ω input.

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SX-R 3-1

H-Field Probe 1 GHz up to 10 GHz

With its small probe head, the SX-R 3-1 can detect very high resolution RF-magnetic fields and can, therefore, identify even the smallest components as interference sources.
Furthermore, the small probe head is designed to allow for measurements at less accessible areas, e.g. near IC pins.

The SX-R 3-1 is a passive near-field probe. The probe head is very small and therefore suitable for detection of magnetic-field distribution, e.g. at ICs. Because of its compact design, the SX-R 3-1 can be used at hard to reach spots ,e.g. between components. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input.

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SX-R 20-1

H-Field Probe 1 GHz up to 20 GHz

The SX-R 20-1 is a passive H-field probe covering a frequency range up to 20 GHz. The probe head of the SX-R 20-1 is very compact. This allows the location of very small H-field sources, e.g. on traces, individual components or above an IC. It has a current attenuating sheath and is electrically shielded. The near-field probe can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input.

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SX-B 3-1

H-Field Probe 1 GHz up to 10 GHz

The measurement coil of the SX-B 3-1 H-field probe is set at a 90° angle relative to the probe shaft. By positioning the probe head vertically, the measurement coil directly touches the surface of the printed circuit board. It is therefore possible to measure even hard to reach spots on the printed circuit board, e.g. between big components of switching controllers.

The SX-B 3-1 is a passive near-field probe. It detects magnetic field lines emitted orthogonally from the device. Magnetic field lines entering the probe laterally are not detected. In contrast to the SX-R 3-1 H-field probe, the coil of the SX-B 3-1 probe is positioned at a 90° angle. The near-field probe is small and handy. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input.

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