RF1 set
Near-Field Probes 30 MHz up to 3 GHz
The RF1 near-field probe set consists of four passive near-field probes for measuring E-fields and magnetic fields from 30 MHz to 3 GHz on electronic assemblies during the development stage. The different probe heads of the RF1 set allow for measurements very close to the electronic assemblies, e.g. on single IC pins, conducting paths, components, and connectors, in order to localize interference sources. An electronic assembly´s field orientation and field distribution can be detected through specific use of the near-field probe. The near field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
RF2 set
Near-Field Probes 30 MHz up to 3 GHz
The RF2 near-field probe set consists of four passive near-field probes for measuring magnetic fields from 30 MHz to 3 GHz on electronic assemblies during the development stage. The probe heads of the RF2 set allow for the step by step localization of RF magnetic-field interference sources on assemblies. The RF-R 400-1 and RF-R 50-1 probes can detect electromagnetic interference from greater distances. With their higher resolution, the RF-B 3-2 and RF-U 5-2 probes are designed to detect the interference sources more precisely. An electronic assembly´s field orientation and field distribution can be detected through specific use of the near-field probe. The near-field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
RF3 mini set
Near-Field Probes 30 MHz up to 3 GHz
The RF3 mini set consists of two passive near-field probes with a resolution under 1 millimeter for measuring magnetic fields between 30 MHz and 3 GHz on electronic assemblies during the development stage.
The probes have special miniature heads which are designed for detailed measurements of magnetic field and disturbance currents in the layout and component range. Field orientation and field distribution on an electronic assembly can be detected by special guidiance of the near field probe.
The near-field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. The near-field probes can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
We recommend using the passive probes with a 20 dB or 30 dB pre-amplifier.
RF4-E set
Near-Field Probes E-field 30 MHz up to 3 GHz
The RF4-E probe set contains two passive E field probes to measure electrical fields with a frequency range from 30 MHz up to 3 GHz for comparison purposes.
The probes are designed for the analysis of E field distributions, detection of coupling mechanisms on modules and evaluation of switching edges on signal leads and RF voltages of the supply system.
The near-field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. The near-field probes can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
RF-R 400-1
H-Field Probe 30 MHz up to 3 GHz
Due to its large diameter (25 mm) the RF-R 400-1 H-field probe is highly sensitive and is suitable for measurements at distances up to 10 cm around assemblies and devices.
The RF-R 400-1 is a passive near-field probe. In principle it has the same structure as the probes RF-R 50-1 and RF-R 3-2. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-R 50-1
H-Field Probe 30 MHz up to 3 GHz
The RF-R 50-1 H-field probe is designed for measurements at assemblies, devices, or cables at distances up to approx. 3 cm. The H-field probe can identify larger components as interference sources.
The RF-R 50-1 is a passive near-field probe. Due to its medium size diameter (10 mm) it covers less of the magnetic field and is, therefore, less sensitive in comparision to the RF-R 400-1 probe. The RF-R 50-1 probe has a higher resolution than RF-R 400-1. In contrast to the H-field probe RF-R 3-2, the RF-R 400-1 covers more of the magnetic field and is more sensitive. As a result it has a lower resolution.
It has a current attenuating sheath and, is therefore, electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-R 3-2
H-Field Probe 30 MHz up to 3 GHz
The RF-R 3-2 near-field probe is used for the high-resolution measurement of RF magnetic fields directly on an assembly e.g. in range around pins and IC cases, conducting paths, decoupling capacitor and EMC components.
The RF-R 3-2 is a passive near-field probe.
It has the same basic construction as the RF-R 50-1 and RF-R 500-1 probes. However, the resolution of RF-R 3-2 is much higher. The H-field probe is designed to be used very close to the components and where high magnetic field strength occurs. It is not suitable for measurements from great distances, which can be done using the RF-R 400-1 and RF-R 50-1 probes. The near-field probe is small and handy. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-R 0.3-3
H-Field Probe mini 30 MHz up to 3 GHz
With its small probe head, the RF-R 0.3-3 can measure magnetic fields in very high resolution. Thus even smallest components can be detected as interference sources. Furthermore, the small probe head is suitable for measurements at hard to reach spots, e.g. near IC pins.
The RF-R 0.3-3 is a passive near-field probe. In principle it has the same structure as the H-field probes RF-R 50-1 and RF-R 400-1. The RF-R 0.3-3 has a significantly higher resolution. The H-field probe is suitable for measurements close to the components in high magnetic electric field strength range. The coil openings of the RF-R 0.3-3 probe are marked with white dots. Because of its small design measurements can be easily made at hard to reach spots, e.g. between components. The near-field probe is small and handy. It has a sheath current attenuation and is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-B 50-1
H-Field Probe 30 MHz up to 3 GHz
The H-field probe RF-B 50-1 was developed for the Langer scanner and is used for the extremely small-scale detection of magnetic field lines entering the probe tip orthogonally. By positioning the probe head vertically, the measurement coil touches the surface of the printed circuit board directly.
The RF-B 50-1 is a passive near-field probe which detects magnetic field lines emitted from the measured object at 90°. Magnetic field lines which enter the probe laterally are not detected.
In contrast to the RF-R 50-1 H-field probe, its coil is positioned in the probe tip at a 90° angle. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-B 3-2
H-Field Probe 30 MHz up to 3 GHz
The measurement coil of the RF-B 3-2 H-field probe is set at a 90° angle to the probe shaft. By positioning the probe head vertically, the measurement coil touches the surface of the printed circuit board directly. This allows for use at places on the surface of printed circuit boards, which are typically hard to access, e.g. between large components of switching controllers.
The RF-B 3-2 is a passive near-field probe which detects magnetic field lines emitted from the measured object at 90°. Magnetic field lines which enter the probe laterally are not detected.
In contrast to the RF-R 3-2 H-field probe, its coil is positioned in the probe tip at a 90° angle. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-B 0.3-3
H-Field Probe mini 30 MHz up to 3 GHz
The H-field probe RF-B 0.3-3 is designed for extreme small-scale detection of magnetic field lines entering at 90° angles into the probe tip. The coil inside the probe head is positioned at a 90° angle from the shaft. For measurements it can be positioned directly onto the measured object.
The RF-B 0.3-3 is a passive near-field probe. The probe head is basically constructed as for the RF-B 3-2. Field lines from other sources entering the probe head laterally are not detected. Because of its very small design, it can be used for measurements at hard to reach spots ,e.g. between components. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-U 5-2
H-Field Probe 30 MHz up to 3 GHz
The RF-U 5-2 H-field probe is designed for detecting magnetical fields at broad conducting paths, cables, connectors, electronic components and their connections. The probe functions like a coupling clamp.
The RF-U 5-2 is a small and handy, passive near-field probe. For best coupling, the probe head should be positioned directly onto the component. Field lines from other sources entering the probe laterally or in a straight line are also detected. It has a current attenuating steath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-U 2.5-2
H-Field Probe 30 MHz up to 3 GHz
The RF-U 2.5-2 near-field probe is designed for the selective measurements of RF currents in conducting paths, component connectors, SMD components, and IC-pins. The probe head has a magnetically active gap with an approx. width of 0.5 mm. To use, the head should be positioned directly onto the measured object.
The RF-U 2.5-2 is a passive near-field probe that functions like the RF-U 5-2 probe, but is designed for SMD components (pins). The near-field probe is small and handy. It has a current attenuating steath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-K 7-4
H-Field Probe 30 MHz up to 1 GHz
The RF-K 7-4 near-field probe detects semi-circular magnetic field lines entering the probe head reversely. Such magnetic field lines occur at traces, rodlike constructional components, cable connectors, and along edges of areal constructional components. The probe functions like a coupling clamp.
The RF-K 7-4 is a passive near-field probe. In contrast to the RF-U 5 near-field probe, the RF-K 7-4 H-field probe is shielded from field lines entering the probe head laterally. The near-field probe detects inhomogeneous magnetic fields enterimg through the bottom of the probe head. Superposed homogeneous fields are not detected by the special probe head. The RF-K 7-4 H-field probe is small and handy and functions like a coupling clamp. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-E 02
E-Field Probe 30 MHz up to 1.5 GHz
The RF-E 02 near-field probe detects electrical fields that are decoupled from bus structures, larger components or supply surfaces. The electrode surface on the underside of the probe tip is approx. 2 cm x 5 cm. The probe functions best within distances of 1 cm – 2 cm from the component.
The RF-E 02 is a passive near-field probe. In principle it has the same structure as the RF-E 05 and RF-E 10 probes. When measuring, the bottom surface of the probe head is positioned close to the measured object. This allows the E-field emitted by an assembly to be detected. To achieve a higher resolution, only the tip of the probe head should be held toward the measured object. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-E 03
E-Field Probe 30 MHz up to 3 GHz
The electrode underneath the RF-E 03 probe head is approx. 4 x 4 mm. With it small E field sources can be localized, e.g. conducting paths, single component of Printed circuit boards. The RF-E 03 probe was developed for Langer scanner.
The RF-E 03 is a passive near field probe. Normally the probe head is positioned directly on the measured object (high electrical field strength). The near field probe is small and handy. It has a sheath current attenuation and is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E field probe has an internal terminating resistance.
RF-E 04
E-Field Probe 30 MHz up to 3 GHz
The electrode on the underside of RF-E 04 probe head detects electrical fields which are decoupled by clocked lines and ICs. The resolution of the probe allows for measurements with a distance from 0,5 to 10 mm above the assembly. The RF-E 04 probe was developed for Langer scanner.
The RF-E 04 is a passive near-field probe. In principle it has the same structure as the RF-E 03 and RF-E 09 probes. With its small square electrode surface, the specific source of the electrical interference field can be detected. When measuring, the E-field probe is held above or positioned onto components and printed circuit boards. The near-field probe is small and handy. The upperside is electrically shielded. It has a current attenuating sheath and, therfore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe does not have an internal terminating resistance of 50 Ω.
RF-E 05
E-Field Probe 30 MHz up to 3 GHz
The electrode at the underside of the probe head of the RF-E 05 has a width of approx. 0.5 mm. The E-fields of clocked lines, IC pins, and smaller components are precisely located. The RF-E 05 probe was developed for Langer scanner.
The RF-E 05 is a near-field probe. It has the same structure as the RF-E 02 and RF-E 10 probes, but detects E-fields from very small ranges. The RF-E 05 is designed to detect the specific cause of an electrical interference field. For measurements the E-field probe is positioned directly onto or held above the components or surfaces of printed circuit boards.The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.
RF-E 09
E-Field Probe 30 MHz up to 3 GHz
The electrode on the underside of RF-E 09 probe head detects electrical fields decoupled by ICs. The resolution of the probe enables measurements from distances of 0,5 to 10 mm above assemblies. The RF-E 09 probe was developed for Langer scanner.
The RF-E 09 is a passive near-field probe. In principle it has the same structure as the RF-E 03 and RF-E 04 probes. With its small square electrode surface, the specific source of electrical interference field can be detected. For measurements, the E-field probe is held above or positioned onto components and printed circuit boards. The upper half of the probe is electrically shielded. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E field probe has an internal terminating resistance.
RF-E 10
E-Field Probe 30 MHz up to 3 GHz
The electrode on the lower edge of the RF-E 10 probe head has a width of approx. 0.2 mm, which can locate even the smallest E-field sources, e.g. conducting paths with a width of 0.1 mm or, single IC pins at high pin ICs.
The RF-E 10 is a passive near-field probe. It has a higher resolution than the RF-E 02 and RF-E 05 probes. Because the probe head should be positioned directly onto the measuring object (high electrical field strength), it is not suitable for measurements within high-scale ranges. This can be done using RF-E 05 and RF-E 02. The E-field probe is small and handy. It has a current attenuating steath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe does not have an internal terminating resistance of 50 Ω.
The RF near field probes are suitable for RF coupling into assemblies or components.(Pay attention to the manual comliance!)The probe heads of the RF family allow the step by step identification of interference sources on an assembly. We recommend initially the detection of interference sources on assemblies by using large sensitive probes from a larger distance. Next, using higher resolution probes, the interference sources can be more precisely detected. With trained use of the near field probes field orientation and field distribution on the electronic assembly can be detected.The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
Download Correction Characteristics
You can download the correction data for our special magnetic field probe types as xlsx-file.
RF probes
RF E-field probes
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Quality features of Langer near-field probes
Overview all near-field probes Langer EMV-Technik GmbH