Near Field Probes - Westek Electronics https://westek.com.au Tue, 18 Feb 2025 06:30:03 +0000 en-AU hourly 1 https://wordpress.org/?v=7.1.1 https://westek.com.au/wp-content/uploads/2026/05/cropped-Westek-Favicon-32x32.webp Near Field Probes - Westek Electronics https://westek.com.au 32 32 ICR E150 set https://westek.com.au/icr-e150-set/ Fri, 20 Dec 2024 13:28:50 +0000 https://westek.com.au/?p=1351 Near-Field Microprobe E-field 7 MHz up to 3 GHz

The near-field microprobe is designed for a high-resolution measurement of electrical near fields. With the ICR E probe the following measurements can be performed:
• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The post ICR E150 set first appeared on Westek Electronics.

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Overview Description Dimensions of ICR probes (PDF, 1.11 MB)

The measuring electrode at the ICR RF probe head is horizontally aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the enclosed Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Two different correction lines are determined – a standardized correction line and an E-field correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

The post ICR E150 set first appeared on Westek Electronics.

]]> ICR 03 set https://westek.com.au/icr-03-set/ Fri, 20 Dec 2024 13:17:18 +0000 https://westek.com.au/?p=1344 Near-Field Microprobes Set

The ICR 03 set contains three of our ICR near-field microprobes (magnetic or E field) of your choice.
The probes are used to measure magnetic or electric near fields with extremely high resolution and sensitivity. Optimal is a distance of < 1 mm to the measuring object. The probe head is equipped with either a vertical (HV) or horizontal (HH) measuring coil. A preamplifier is integrated in every probe, which is powered by the BT 706 bias tee.

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ICR Near-Field Microprobes overview

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]]> Near-Field Microprobe Sets ICR HV H Field https://westek.com.au/near-field-microprobe-sets-icr-hv-h-field/ Fri, 20 Dec 2024 11:33:46 +0000 https://westek.com.au/?p=1333 The ICR HV set contains one ICR near-field microprobe for magnetic field measurement. The measuring coil is vertical in the probe head. The ICR probes are operated with a positioning system (Langer Scanner).

The post Near-Field Microprobe Sets ICR HV H Field first appeared on Westek Electronics.

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ICR HV100-6 set
Near-Field Microprobe 2.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is vertically aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Three different correction lines are determined – a standardized correction line, an H-field correction line, and a current correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HV100-27 set
Near-Field Microprobe 1.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is vertically aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Three different correction lines are determined – a standardized correction line, an H-field correction line, and a current correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HV150-6 set
Near-Field Microprobe 2.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is vertically aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Three different correction lines are determined – a standardized correction line, an H-field correction line, and a current correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HV150-27 set
Near-Field Microprobe 1.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is vertically aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Three different correction lines are determined – a standardized correction line, an H-field correction line, and a current correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HV250-6 set
Near-Field Microprobe 2.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is vertically aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Three different correction lines are determined – a standardized correction line, an H-field correction line, and a current correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HV250-75 set
Near-Field Microprobe 0.5 MHz – 2 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is vertically aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Three different correction lines are determined – a standardized correction line, an H-field correction line, and a current correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HV500-6 set
Near-Field Microprobe 2 MHz – 6 GHz

The probe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is vertically aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the enclosed Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Three different correction lines are determined – a standardized correction line, an H-field correction line, and a current correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HV500-75 set
Near-Field Microprobe 200 kHz – 1 GHz

The probe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is vertically aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Three different correction lines are determined – a standardized correction line, an H-field correction line, and a current correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

Comparison of Measurement Resolution and Frequency Ranges:
Type of Probe (HV)Inner DiameterFrequency RangeMeasurement Resolution
ICR HV100-27100 µm1.5 MHz – 6 GHz60 µm
ICR HV100-62.5 MHz – 6 GHz
ICR HV150-27150 µm1.5 MHz – 6 GHz80 µm
ICR HV150-62.5 MHz – 6 GHz
ICR HV250-75250 µm500 kHz – 2 GHz110 µm
ICR HV250-62.5 MHz – 6 GHz
ICR HV500-75500 µm200 kHz – 1 GHz300 µm
ICR HV500-62 MHz – 6 GHz

Probes named with ICR HVxxx-27/-75 are characterized by a higher gain in the lower frequency range. (See frequency responses of HH near-field microprobes at the bottom.)

Probes named with ICR HHxxx-27/-75 are characterized by a higher gain in the lower frequency range.

Frequency response HH250-75 up to 2 GHz.

Frequency response HH500-75 up to 1 GHz.

Downloads:

ICR Near-Field Microprobes overview

Overview Description Dimensions of ICR probes (PDF, 1.11 MB)

The post Near-Field Microprobe Sets ICR HV H Field first appeared on Westek Electronics.

]]> Near-Field Microprobe Sets ICR HH H Field https://westek.com.au/near-field-microprobe-sets-icr-hh-h-field/ Fri, 20 Dec 2024 11:05:42 +0000 https://westek.com.au/?p=1328 The ICR HH set contains one ICR near-field microprobe for magnetic field measurement. The measuring coil is horizontal in the probe head. The ICR probes are operated with a positioning system (Langer Scanner).

The post Near-Field Microprobe Sets ICR HH H Field first appeared on Westek Electronics.

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ICR HH100-6 set
Near-Field Microprobe 2.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is horizontally aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Two different correction lines are determined – a standardized correction line and an H-field correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HH100-27 set
Near-Field Microprobe 1.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is horizontally aligned to the measurement surface.
A preamplifier is integrated in the probe housing and is supplied by the enclosed bias tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Two different correction lines are determined – a standardized correction line and an H-field correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HH150-6 set
Near-Field Microprobe 2.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is horizontally aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Two different correction lines are determined – a standardized correction line and an H-field correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HH150-27 set
Near-Field Microprobe 1.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is horizontally aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Two different correction lines are determined – a standardized correction line and an H-field correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HH250-6 set
Near-Field Microprobe 2.5 MHz – 6 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is horizontally aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Two different correction lines are determined – a standardized correction line and an H-field correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HH250-75 set
Near-Field Microprobe 0.5 MHz – 2 GHz

The near-field microprobe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is horizontally aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Two different correction lines are determined – a standardized correction line and an H-field correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HH500-6 set
Near-Field Microprobe 2 MHz – 6 GHz

The probe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is horizontally aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Two different correction lines are determined – a standardized correction line and an H-field correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

ICR HH500-75 set
Near-Field Microprobe 200 kHz – 1 GHz

The probe is designed for a high-resolution measurement of magnetic near fields. With the ICR H probe the following measurements can be performed:

• Surface Scan via IC according to IEC 61967-3
• Volumenscan via IC
• Pin Scan

The measuring coil at the ICR RF probe head is horizontally aligned to the measurement surface.
A preamplifier is integrated into the probe housing and powered by the Bias-Tee.
The ICR near-field probes undergo a quality check before they are delivered. Different reference setup measurements are performed and resulting correction lines are generated. Two different correction lines are determined – a standardized correction line and an H-field correction line.

Attention: Due to its construction, the ICR probe is sensitive to shock and comes with a protective cap for transport and handling.

Learn More

Comparison of Measurement Resolution and Frequency Ranges:
Type of Probe (HH)Inner DiameterFrequency rangeMeasurement Resolution
ICR HH100-27100 µm1.5 MHz – 6 GHz70 µm
ICR HH100-62.5 MHz – 6 GHz
ICR HH150-27150 µm1.5 MHz – 6 GHz100 µm
ICR HH150-62.5 MHz – 6 GHz
ICR HH250-75250 µm500 kHz – 2 GHz150 µm
ICR HH250-62.5 MHz – 6 GHz
ICR HH500-75500 µm200 kHz – 1 GHz300 µm
ICR HH500-62 MHz – 6 GHz
Probes named with ICR HHxxx-27/-75 are characterized by a higher gain in the lower frequency range.

Frequency response HH250-75 up to 2 GHz.

Frequency response HH500-75 up to 1 GHz.

Downloads:

ICR Near-Field Microprobes overview

Overview Description Dimensions of ICR probes (PDF, 1.11 MB)

The post Near-Field Microprobe Sets ICR HH H Field first appeared on Westek Electronics.

]]> Langer MFA, Active, Near Field Probes (1MHz up to 6 GHz) https://westek.com.au/langer-mfa-active-near-field-probes-1mhz-up-to-6-ghz/ Fri, 20 Dec 2024 08:42:45 +0000 https://westek.com.au/?p=1306 The MFA family consists of four active magnetic field probes. The MFA 01 includes three magnetic field probes. The MFA 02 set consists of two magnetic field probes for low frequency measurements.

The post Langer MFA, Active, Near Field Probes (1MHz up to 6 GHz) first appeared on Westek Electronics.

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MFA 01 set
Micro Probes 1 MHz up to 6 GHz

The MFA 01 set includes high-resolution near-field micro probes used to measure magnetic fields up to 6 GHz, e.g. at signal conductors (150 µm), SMD components (0603-0201), or IC pins. Each hand-guided MFA near-field micro probe has an integrated preamplifier.
The amplifier stage (9 V, 100 mA) is powered via the bias tee BT 706, which has an impedance of 50 Ohm. The near-field micro probes are connected via the BT 706 to a spectrum analyzer or an oscilloscope.
Langer EMV-Technik GmbH includes correction lines in the delivery. With the help of the correction lines the probe’s output voltage is converted into either the respective magnetic field or the current running through the conductor.

Learn More

MFA 02 set
Micro Probes 1 MHz up to 1 GHz

The MFA 02 set includes two high-resolution near-field micro probes used to measure low-frequency magnetic fields up to 1 GHz, e.g. at signal conductors (150 µm), SMD components (0603-0201) or IC pins. Each hand-guided MFA near-field micro probe has an integrated preamplifier.
The amplifier stage (9 V, 100 mA) is powered via the BT 706 bias tee, which has an impedance of 50 Ohm. The near-field micro probes are connected via the BT 706 to a spectrum analyzer or an oscilloscope.
Langer EMV-Technik GmbH includes correction lines in the scope of delivery. With the help of the correction lines the probe’s output voltage is converted into either the respective magnetic field or the current running through the conductor.

Learn More

MFA-R 0.2-6
Near-Field Micro Probe 100 MHz up to 6 GHz

The MFA-R 0.2-6 near-field micro probe has an extremely small and high resolution probe head. It is suitable for measuring RF magnetic fields up to 6 GHz on components, e.g. close to IC pins, finest conducting paths or smallest SMD components (0603-0201).
The MFA-R 0.2-6 is an active magnetic field micro probe that requires the BT 706 bias tee to operate. In principle, it has the same structure as the MFA-R 0.2-75, differing only in its frequency response.
The coil opening at the probe head is laterally marked with black dots. The near-field micro probe is small and handy. It has a current attenuating sheath and is electrically shielded.
An amplifier stage is integrated into the probe head. The amplifier stage (9 V, 100 mA) is powered via the bias tee. It has an impedance of 50 Ω. The near-field micro probe is connected to a spectrum analyzer or oscilloscope with a 50 Ω input via the BT 706 bias tee. A power supply unit and the bias tee are included in the scope of delivery.
With the help of the correction lines, the probe’s output voltage is converted into either the respective magnetic field or the current running through the conductor.

Learn More

MFA-R 0.2-75
Near-Field Micro Probe 1 MHz up to 1 GHz

The MFA-R 0.2-75 near-field micro probe has an extremely small and high resolution probe head. It is suitable for measuring RF magnetic fields up to 1 GHz on components, e.g. close to IC pins, finest conducting paths or smallest SMD components (0603-0201).

The MFA-R 0.2-75 is an active magnetic field micro probe that requires the BT 706 bias tee to operate. In principle, it has the same structure as the MFA-K 0.2-6, differing only in its frequency response.
The coil opening at the probe head is laterally marked with black dots. The near-field micro probe is small and handy. It has a current attenuating sheath and is electrically shielded.
An amplifier stage is integrated into the probe head. The amplifier stage (9 V, 100 mA) is powered via the bias tee. It has an impedance of 50 Ω. The near-field micro probe is connected to a spectrum analyzer or oscilloscope with a 50 Ω input via the BT 706 bias tee. A power supply unit and the bias tee are included in the scope of delivery.
With the help of the correction lines, the probe’s output voltage is converted into either the respective magnetic field or the current running through the conductor.

Learn More

MFA-K 0.1-12
Near-Field Micro Probe 100 MHz up to 6 GHz

The MFA-K 0.1-12 near-field micro probe has an extremely small probe head which functions like a coupling clamp. It allows for current measurements at IC pins and the finest conducting paths. The near-field micro probe is shielded from field lines entering the probe head laterally.

The hand-guided, high resolution MFA-K 0.1-12 is an active near-field micro probe that requires the BT 706 bias tee to operate. The near-field micro probe is used to measure magnetic fields up to 6 GHz especially at signal conductors (150 µm) or IC pins. In principle it has the same structure as the MFA-K 0.1-30, differing only in its frequency response.
Due to the special probe head design, magnetic fields which impinge the probe head laterally, e.g. from adjoining conductors, are not detected.
The direction of the coil is marked on the probe head with a black dot.
An amplifier stage is integrated into the probe head. The amplifier stage (9 V, 100 mA) is powered via the bias tee. It has an impedance of 50 Ω. The near-field micro probe is connected to a spectrum analyzer or oscilloscope with a 50 Ω input via the BT 706 bias tee. A power supply unit and the bias tee are included in the scope of delivery.
With the help of the correction lines, the probe’s output voltage is converted into either the respective magnetic field or the current running through the conductor.
The near-field micro probe is small and handy. It has a current attenuating sheath and is electrically shielded.

Learn More

MFA-K 0.1-30
Near-Field Micro Probe 1 MHz up to 1 GHz

The MFA-K 0.1-30 near-field micro probe has an extremely small probe head which functions like a coupling clamp. It allows for current measurements at IC pins and the finest conducting paths. The near-field micro probe is shielded from field lines entering the probe head laterally.

The hand-guided, high resolution MFA-K 0.1-30 is an active near-field micro probe that requires the BT 706 bias tee to operate. The near-field micro probe is used to measure magnetic fields up to 1 GHz especially at signal conductors (150 µm) or IC pins.
In principle it has the same structure as the MFA-K 0.1-12, differing only in its frequency response.
Due to the special probe head design, magnetic fields which impinge the probe head laterally, e.g. from adjoining conductors, are not detected.
The direction of the coil is marked on the probe head with a black dot.
An amplifier stage is integrated into the probe head. The amplifier stage (9 V, 100 mA) is powered via the bias tee. It has an impedance of 50 Ω. The near-field micro probe is connected to a spectrum analyzer or oscilloscope with a 50 Ω input via the BT 706 bias tee. A power supply unit and the bias tee are included in the scope of delivery.
With the help of the correction lines, the probe’s output voltage is converted into either the respective magnetic field or the current running through the conductor.
The near-field micro probe is small and handy. It has a current attenuating sheath and is electrically shielded.

Learn More

The MFA near-field probes are not suitable for RF coupling (injection)!The MFA microprobes are active near-field probes, i.e. they have an integrated pre-amplifier. With a measurement resolution range up to 300 µm, these probes are particularly suitable for measuring RF magnetic fields in very small areas on the assembly, e.g. IC pins, the thinnest conducting paths, or smallest SMD components (0603-0201).

Download Correction Characteristics

You can download the correction data for our special magnetic field probe types as xlsx-file.
MFA probes

Downloads

Quality features of Langer near-field probes
Overview all near-field probes Langer EMV-Technik GmbH

The post Langer MFA, Active, Near Field Probes (1MHz up to 6 GHz) first appeared on Westek Electronics.

]]> Langer HR, Passive, Near Field Probes (up to 40 GHz) https://westek.com.au/langer-hr-passive-near-field-probes-up-to-40-ghz/ Fri, 20 Dec 2024 08:24:21 +0000 https://westek.com.au/?p=1297 The HR family consists of an H-field probe and an E-field probe for the measurement of high-frequency RF fields up to 40 GHz during development.

The post Langer HR, Passive, Near Field Probes (up to 40 GHz) first appeared on Westek Electronics.

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HR1 set
Near-Field Probes up to 40 GHz

The HR1 set contains one E-field probe HR-E 40-1 and one magnetic field probe HR-R 8-1 each for the development-accompanying measurement of magnetic and electric field in the frequency range up to 40 GHz.

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HR-R 8-1 set
Near-Field Probe Set up to 40 GHz B-field

The HR-R 8-1 set contains the HR-R 8-1 B field probe. With this probe magnetic field measurements up to 40 GHz can be performed. The special probe head of the HR-R 8-1 allows measurements on IC’s, circuit board structures and components for the localization of high frequency magnetic fields.

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HR-R 8-1
Near-field probe up to 40 GHz B-field

The HR-R 8-1 is a passive near-field probe for measuring magnetic fields up to 40 GHz.
The measuring tip is decoupled from the cable shield by special damping systems. In addition, the probe contains a current attenuator. The probe has a internal matching network to 50 ohm.

The special probe head of the HR near-field probe enables magnetic field measurements to be taken directly on IC pins or individual conductor tracks to localize B-field sources.

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HR-E 40-1 set
Near-Field Probe Set up to 40 GHz E-field

The HR-E 40-1 set contains the HR-E 40-1 E-field probe. With this field probe measurements up to 40 GHz can be performed.
The special probe head of the HR near-field probe enables measurements to be taken directly on individual conductor tracks to localize E-field sources.

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HR-E 40-1
E-Field Probe up to 40 GHz

The HR-E 40-1 is a passive near-field probe for measuring electric fields up to 40 GHz.
The measuring tip is decoupled from the cable shield by special damping systems. In addition, the probe contains a current attenuator.

Learn More

Downloads

Quality features of Langer near-field probes
Overview all near-field probes Langer EMV-Technik GmbH

The post Langer HR, Passive, Near Field Probes (up to 40 GHz) first appeared on Westek Electronics.

]]> Langer SX, Passive, Near Field Probes (1GHz up to 20 GHz) https://westek.com.au/langer-sx-passive-near-field-probes-1ghz-up-to-20-ghz/ Fri, 20 Dec 2024 08:15:12 +0000 https://westek.com.au/?p=1287 The SX family consists of three H-field probes and one E-field probe.
The SX1 set (two H-field probes and one E-field probe) and the SX-R 20-1 set are available.

The post Langer SX, Passive, Near Field Probes (1GHz up to 20 GHz) first appeared on Westek Electronics.

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SX1 set
Near-Field Probes 1 GHz up to 10 GHz

The SX1 set consists of three passive near-field probes for measuring E-fields and magnetic fields with a high clock frequency from 1 GHz to 10 GHz on electronic assemblies and ICs during the development stage. The different probe heads of the SX1 set allow for measurements very close to the electronic assemblies, e.g. on single IC pins, conducting paths, components, and connectors, in order to localize interference sources. An electronic assembly’s field orientation and field distribution can be detected through specific use of the near-field probe. The near-field probes are small and handy. They have a current attenuating sheath and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input.

High clock rates, e.g. above 3 GHz approach 10 GHz already at the 3rd harmonic. These harmonics are decoupled from RF sources on the board, e.g. conductor sections, ICs and other components. Other structural parts of the assembly can be excited to oscillate and lead to interference emission.
With the high internal base frequency of today’s assemblies, the measurement of harmonic frequency multiples is an important step towards an EMC-compliant assembly.

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SX-R 20-1 set
Near-Field Probe 1 GHz up to 20 GHz

The SX-R 20-1 set consists of a passive near-field probe for the measurement of high-frequency magnetic fields up to 20 GHz during development. The probe head of the SX-R 20-1 allows measurements close to the electronic assembly, e.g. on individual IC pins, conductors, components and their connections to locate sources of interference. The field orientation and field distribution on the electronic assembly can be determined by guiding the near-field probe accordingly. The near-field probe is small and handy. It has a sheath current attenuation and is electrically shielded.
The near-field probe is connected to a spectrum analyzer or an oscilloscope with 50 Ω input.

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SX-R 3-1
H-Field Probe 1 GHz up to 10 GHz

With its small probe head, the SX-R 3-1 can detect very high resolution RF-magnetic fields and can, therefore, identify even the smallest components as interference sources.
Furthermore, the small probe head is designed to allow for measurements at less accessible areas, e.g. near IC pins.

The SX-R 3-1 is a passive near-field probe. The probe head is very small and therefore suitable for detection of magnetic-field distribution, e.g. at ICs. Because of its compact design, the SX-R 3-1 can be used at hard to reach spots ,e.g. between components. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input.

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SX-R 20-1
H-Field Probe 1 GHz up to 20 GHz

The SX-R 20-1 is a passive H-field probe covering a frequency range up to 20 GHz. The probe head of the SX-R 20-1 is very compact. This allows the location of very small H-field sources, e.g. on traces, individual components or above an IC. It has a current attenuating sheath and is electrically shielded. The near-field probe can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input.

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SX-B 3-1
H-Field Probe 1 GHz up to 10 GHz

The measurement coil of the SX-B 3-1 H-field probe is set at a 90° angle relative to the probe shaft. By positioning the probe head vertically, the measurement coil directly touches the surface of the printed circuit board. It is therefore possible to measure even hard to reach spots on the printed circuit board, e.g. between big components of switching controllers.

The SX-B 3-1 is a passive near-field probe. It detects magnetic field lines emitted orthogonally from the device. Magnetic field lines entering the probe laterally are not detected. In contrast to the SX-R 3-1 H-field probe, the coil of the SX-B 3-1 probe is positioned at a 90° angle. The near-field probe is small and handy. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input.

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SX-E 03
E-Field Probe 1 GHz up to 10 GHz

With 4×4 mm dimensions, the electrode on the underside of the probe head of the SX-E 03 is very compact. This allows for the localization of very small E-field sources, e.g. at conducting paths, single components, or on printed circuit boards.

The SX-E 03 is a passive near-field probe. To measure, the probe head is positioned directly onto the measured object, due to higher electrical field strength at the measured object. The near-field probe is small and handy. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input.

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Download Correction Characteristics

You can download the correction data for our special magnetic field probe types as xlsx-file.
SX probes
SX-E 03 probe

Downloads

Quality features of Langer near-field probes
Overview all near-field probes Langer EMV-Technik GmbH

The post Langer SX, Passive, Near Field Probes (1GHz up to 20 GHz) first appeared on Westek Electronics.

]]> Langer XF, Passive Near Field Probes (30 MHz up to 6 GHz) https://westek.com.au/langer-xf-passive-near-field-probes-30-mhz-up-to-6-ghz/ Fri, 20 Dec 2024 07:44:51 +0000 https://westek.com.au/?p=1275 The XF family consists of four magnetic-field probes and three E-field probes. The XF1 set (four magnetic-field probes and one E-field probe) as well as customized sets are available.

The post Langer XF, Passive Near Field Probes (30 MHz up to 6 GHz) first appeared on Westek Electronics.

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XF1 set
Near-Field Probes 30 MHz up to 6 GHz

The XF1 set consists of four magnetic field probes and one E-field probe for measuring E-fields and magnetic fields from 30 MHz to 6 GHz on electronic assemblies during the development stage. Due to their integrated impedance matching, the probes are less sensitive in the lower frequency range than the RF-type probes. The probe heads of the XF1 set allow for the step by step localization of magnetic-field interference sources on assemblies. First the XF-R 400-1 probe is used to detect electromagnetic interference from greater distances. Next, the higher resolution probes can be used to more precisely detect the interference sources. The E-field probe is used for the detection of electric interference fields near the assemblies. With trained use of the near-field probes, field orientation and field distribution can be detected. The near-field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They have an internal terminating resistance.

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XF-R 400-1
H-Field Probe 30 MHz up to 6 GHz

Due to its large diameter (25 mm) and its high resolution, the XF-R 400-1 H-field probe is suitable for measurements at distances up to 10 cm around assemblies and devices.

The XF-R 400-1 is a passive near-field probe. In principle it has the same structure as the XF-R 100-1 and XF-R 3-2 probes. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe has an internal terminating resistance.

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XF-R 100-1
H-Field Probe 30 MHz up to 6 GHz

The XF-R 100-1 H-field probe is suitable for measurements around assemblies, devices or cables at a distance of up to approx. 3 cm. The H-field probe can identify larger components as potential sources of interference. The magnetic field probe has a very high bandwidth and linearity.

The XF-R 100-1 is a passive near-field probe. The probe head’s size, and thus its resolution range, is between that of the XF-R 400-1 (25 mm) and XF-R 3-1 (3mm) probes. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe has an internal terminating resistance.

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XF-R 3-1
H-Field Probe 30 MHz up to 6 GHz

The XF-R 3-1 near-field probe is designed for direct high-resolution measurements of RF magnetic fields on an assembly, e.g. around the pins and IC cases, conducting paths, decoupling capacitor, and EMC components.

In principle the XF-R 3-1 H-field probe has the same structure as the XF-R 100-1 and XF-R 400-1 probes. The resolution of the XF-R 3-1 is significantly higher. The H-field probe is suitable for measurements close to the components with high magnetic field strength. It is not suitable for measurements from large distances, which can be done using XF-R 400-1 and XF-R 100-1. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe has an internal terminating resistance.

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XF-B 3-1
H-Field Probe 30 MHz up to 6 GHz

The measurement coil of the XF-B 3-1 H-field probe is set at a 90° angle to the probe shaft.

By positioning the probe head vertically, the measurement coil touches the surface of the printed circuit board directly. This allows for use at places on the surface of printed circuit boards, which are typically hard to access, e.g. between large components of switching controllers.

The XF-B 3-1 is a passive near-field probe which detects magnetic field lines emitted from the measured object at 90°. Magnetic field lines which enter the probe laterally are not detected.
In contrast to the XF-R 3-1 H-field probe, its coil is positioned in the probe tip at a 90° angle.
The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe has an internal terminating resistance.

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XF-U 2.5-1
H-Field Probe 30 MHz up to 6 GHz

The XF-U 2.5-2 near-field probe is designed for the selective measurements of RF currents in conducting paths, component connectors, SMD components, and IC pins. The probe head has a magnetically active gap with an approx. width of 0.5 mm. To use, the head should be positioned directly onto the measured object.

The XF-U 2.5-2 is a passive near-field probe that is designed for SMD components (pins). The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe has an internal terminating resistance.

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XF-E 04s
E-Field Probe 30 MHz up to 6 GHz

The electrode on the probe head of the XF-E 04s near-field probe detects electrical fields which, for example are decoupled above the IC’s surface. The probe’s resolution allows for measurements at a distance of 0.5 mm upto 10 mm above an assembly.

The XF-E 04s is a passive near-field probe. In principle it has the same structure as the XF-E 09s probes. To measure, the E-field probe is positioned above or onto components and printed circuit boards. It has a current attenuating sheath and, therefore, its upper half is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe has an internal terminating resistance.

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XF-E 09s
E-Field Probe 30 MHz up to 6 GHz

The electrode on the probe head of the XF-E 09s near-field probe detects electrical fields which, for example are decoupled above the IC’s surface. The probe’s resolution allows for measurements at a distance of 0.5 mm upto 10 mm above an assembly.

The XF-E 09s is a passive near-field probe. In principle it has the same structure as the XF-E 04s probe. To measure, the E-field probe is positioned above or onto components and printed circuit boards. It has a current attenuating sheath and, therefore, its upper half is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe has an internal terminating resistance.

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XF-E 10
E-Field Probe 30 MHz up to 6 GHz

The electrode in the probe head of the XF-E 10 has a width of approx. 0.2 mm. With the probe even smallest E-field sources can be located, e.g. conducting paths with a width of 0.1 mm or single pins on multi pinned ICs. To measure, the E-field probe is positioned onto the object.

The XF-E 10 probe is a passive near-field probe. In principle it has the same structure as the XF-E 04 and XF-E 09 probes. The resolution of XF-E 10, however, is significantly higher. Normally the probe head is positioned directly onto the measured object (high electric field strength). It is not suitable for measurements from greater distances, which can be done using the XF-E 04 or XF-E 09. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe has an internal terminating resistance.

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The XF near-field probes are not suitable for RF coupling (injection)!

Download Correction Characteristics

You can download the correction data for our special magnetic field probe types as xlsx-file.
XF probes
XF E-field probes

Downloads

Quality features of Langer near-field probes
Overview all near-field probes Langer EMV-Technik GmbH

The post Langer XF, Passive Near Field Probes (30 MHz up to 6 GHz) first appeared on Westek Electronics.

]]> Langer RF, Passive, Near Field Probes (30 MHz up to 3 GHz) https://westek.com.au/langer-lf-passive-near-field-probes-30-mhz-up-to-3-ghz/ Fri, 20 Dec 2024 06:31:31 +0000 https://westek.com.au/?p=1237 The RF family consists of nine magnetic field probes and six E-field probes, which are available in sets. These sets are optimized for different measurement tasks.
We are happy to create customized sets upon request.

The post Langer RF, Passive, Near Field Probes (30 MHz up to 3 GHz) first appeared on Westek Electronics.

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RF1 set
Near-Field Probes 30 MHz up to 3 GHz

The RF1 near-field probe set consists of four passive near-field probes for measuring E-fields and magnetic fields from 30 MHz to 3 GHz on electronic assemblies during the development stage. The different probe heads of the RF1 set allow for measurements very close to the electronic assemblies, e.g. on single IC pins, conducting paths, components, and connectors, in order to localize interference sources. An electronic assembly´s field orientation and field distribution can be detected through specific use of the near-field probe. The near field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.

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RF2 set
Near-Field Probes 30 MHz up to 3 GHz

The RF2 near-field probe set consists of four passive near-field probes for measuring magnetic fields from 30 MHz to 3 GHz on electronic assemblies during the development stage. The probe heads of the RF2 set allow for the step by step localization of RF magnetic-field interference sources on assemblies. The RF-R 400-1 and RF-R 50-1 probes can detect electromagnetic interference from greater distances. With their higher resolution, the RF-B 3-2 and RF-U 5-2 probes are designed to detect the interference sources more precisely. An electronic assembly´s field orientation and field distribution can be detected through specific use of the near-field probe. The near-field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.

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RF3 mini set
Near-Field Probes 30 MHz up to 3 GHz

The RF3 mini set consists of two passive near-field probes with a resolution under 1 millimeter for measuring magnetic fields between 30 MHz and 3 GHz on electronic assemblies during the development stage.
The probes have special miniature heads which are designed for detailed measurements of magnetic field and disturbance currents in the layout and component range. Field orientation and field distribution on an electronic assembly can be detected by special guidiance of the near field probe.
The near-field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. The near-field probes can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
We recommend using the passive probes with a 20 dB or 30 dB pre-amplifier.

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RF4-E set
Near-Field Probes E-field 30 MHz up to 3 GHz

The RF4-E probe set contains two passive E field probes to measure electrical fields with a frequency range from 30 MHz up to 3 GHz for comparison purposes.
The probes are designed for the analysis of E field distributions, detection of coupling mechanisms on modules and evaluation of switching edges on signal leads and RF voltages of the supply system.
The near-field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. The near-field probes can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.

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RF-R 400-1
H-Field Probe 30 MHz up to 3 GHz

Due to its large diameter (25 mm) the RF-R 400-1 H-field probe is highly sensitive and is suitable for measurements at distances up to 10 cm around assemblies and devices.

The RF-R 400-1 is a passive near-field probe. In principle it has the same structure as the probes RF-R 50-1 and RF-R 3-2. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-R 50-1
H-Field Probe 30 MHz up to 3 GHz

The RF-R 50-1 H-field probe is designed for measurements at assemblies, devices, or cables at distances up to approx. 3 cm. The H-field probe can identify larger components as interference sources.

The RF-R 50-1 is a passive near-field probe. Due to its medium size diameter (10 mm) it covers less of the magnetic field and is, therefore, less sensitive in comparision to the RF-R 400-1 probe. The RF-R 50-1 probe has a higher resolution than RF-R 400-1. In contrast to the H-field probe RF-R 3-2, the RF-R 400-1 covers more of the magnetic field and is more sensitive. As a result it has a lower resolution.
It has a current attenuating sheath and, is therefore, electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-R 3-2
H-Field Probe 30 MHz up to 3 GHz

The RF-R 3-2 near-field probe is used for the high-resolution measurement of RF magnetic fields directly on an assembly e.g. in range around pins and IC cases, conducting paths, decoupling capacitor and EMC components.

The RF-R 3-2 is a passive near-field probe.
It has the same basic construction as the RF-R 50-1 and RF-R 500-1 probes. However, the resolution of RF-R 3-2 is much higher. The H-field probe is designed to be used very close to the components and where high magnetic field strength occurs. It is not suitable for measurements from great distances, which can be done using the RF-R 400-1 and RF-R 50-1 probes. The near-field probe is small and handy. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-R 0.3-3
H-Field Probe mini 30 MHz up to 3 GHz

With its small probe head, the RF-R 0.3-3 can measure magnetic fields in very high resolution. Thus even smallest components can be detected as interference sources. Furthermore, the small probe head is suitable for measurements at hard to reach spots, e.g. near IC pins.

The RF-R 0.3-3 is a passive near-field probe. In principle it has the same structure as the H-field probes RF-R 50-1 and RF-R 400-1. The RF-R 0.3-3 has a significantly higher resolution. The H-field probe is suitable for measurements close to the components in high magnetic electric field strength range. The coil openings of the RF-R 0.3-3 probe are marked with white dots. Because of its small design measurements can be easily made at hard to reach spots, e.g. between components. The near-field probe is small and handy. It has a sheath current attenuation and is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-B 50-1
H-Field Probe 30 MHz up to 3 GHz

The H-field probe RF-B 50-1 was developed for the Langer scanner and is used for the extremely small-scale detection of magnetic field lines entering the probe tip orthogonally. By positioning the probe head vertically, the measurement coil touches the surface of the printed circuit board directly.

The RF-B 50-1 is a passive near-field probe which detects magnetic field lines emitted from the measured object at 90°. Magnetic field lines which enter the probe laterally are not detected.
In contrast to the RF-R 50-1 H-field probe, its coil is positioned in the probe tip at a 90° angle. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-B 3-2
H-Field Probe 30 MHz up to 3 GHz

The measurement coil of the RF-B 3-2 H-field probe is set at a 90° angle to the probe shaft. By positioning the probe head vertically, the measurement coil touches the surface of the printed circuit board directly. This allows for use at places on the surface of printed circuit boards, which are typically hard to access, e.g. between large components of switching controllers.

The RF-B 3-2 is a passive near-field probe which detects magnetic field lines emitted from the measured object at 90°. Magnetic field lines which enter the probe laterally are not detected.
In contrast to the RF-R 3-2 H-field probe, its coil is positioned in the probe tip at a 90° angle. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-B 0.3-3
H-Field Probe mini 30 MHz up to 3 GHz

The H-field probe RF-B 0.3-3 is designed for extreme small-scale detection of magnetic field lines entering at 90° angles into the probe tip. The coil inside the probe head is positioned at a 90° angle from the shaft. For measurements it can be positioned directly onto the measured object.

The RF-B 0.3-3 is a passive near-field probe. The probe head is basically constructed as for the RF-B 3-2. Field lines from other sources entering the probe head laterally are not detected. Because of its very small design, it can be used for measurements at hard to reach spots ,e.g. between components. It has a current attenuating sheath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-U 5-2
H-Field Probe 30 MHz up to 3 GHz

The RF-U 5-2 H-field probe is designed for detecting magnetical fields at broad conducting paths, cables, connectors, electronic components and their connections. The probe functions like a coupling clamp.

The RF-U 5-2 is a small and handy, passive near-field probe. For best coupling, the probe head should be positioned directly onto the component. Field lines from other sources entering the probe laterally or in a straight line are also detected. It has a current attenuating steath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-U 2.5-2
H-Field Probe 30 MHz up to 3 GHz

The RF-U 2.5-2 near-field probe is designed for the selective measurements of RF currents in conducting paths, component connectors, SMD components, and IC-pins. The probe head has a magnetically active gap with an approx. width of 0.5 mm. To use, the head should be positioned directly onto the measured object.

The RF-U 2.5-2 is a passive near-field probe that functions like the RF-U 5-2 probe, but is designed for SMD components (pins). The near-field probe is small and handy. It has a current attenuating steath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-K 7-4
H-Field Probe 30 MHz up to 1 GHz

The RF-K 7-4 near-field probe detects semi-circular magnetic field lines entering the probe head reversely. Such magnetic field lines occur at traces, rodlike constructional components, cable connectors, and along edges of areal constructional components. The probe functions like a coupling clamp.

The RF-K 7-4 is a passive near-field probe. In contrast to the RF-U 5 near-field probe, the RF-K 7-4 H-field probe is shielded from field lines entering the probe head laterally. The near-field probe detects inhomogeneous magnetic fields enterimg through the bottom of the probe head. Superposed homogeneous fields are not detected by the special probe head. The RF-K 7-4 H-field probe is small and handy and functions like a coupling clamp. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-E 02
E-Field Probe 30 MHz up to 1.5 GHz

The RF-E 02 near-field probe detects electrical fields that are decoupled from bus structures, larger components or supply surfaces. The electrode surface on the underside of the probe tip is approx. 2 cm x 5 cm. The probe functions best within distances of 1 cm – 2 cm from the component.

The RF-E 02 is a passive near-field probe. In principle it has the same structure as the RF-E 05 and RF-E 10 probes. When measuring, the bottom surface of the probe head is positioned close to the measured object. This allows the E-field emitted by an assembly to be detected. To achieve a higher resolution, only the tip of the probe head should be held toward the measured object. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-E 03
E-Field Probe 30 MHz up to 3 GHz

The electrode underneath the RF-E 03 probe head is approx. 4 x 4 mm. With it small E field sources can be localized, e.g. conducting paths, single component of Printed circuit boards. The RF-E 03 probe was developed for Langer scanner.

The RF-E 03 is a passive near field probe. Normally the probe head is positioned directly on the measured object (high electrical field strength). The near field probe is small and handy. It has a sheath current attenuation and is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E field probe has an internal terminating resistance.

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RF-E 04
E-Field Probe 30 MHz up to 3 GHz

The electrode on the underside of RF-E 04 probe head detects electrical fields which are decoupled by clocked lines and ICs. The resolution of the probe allows for measurements with a distance from 0,5 to 10 mm above the assembly. The RF-E 04 probe was developed for Langer scanner.

The RF-E 04 is a passive near-field probe. In principle it has the same structure as the RF-E 03 and RF-E 09 probes. With its small square electrode surface, the specific source of the electrical interference field can be detected. When measuring, the E-field probe is held above or positioned onto components and printed circuit boards. The near-field probe is small and handy. The upperside is electrically shielded. It has a current attenuating sheath and, therfore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe does not have an internal terminating resistance of 50 Ω.

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RF-E 05
E-Field Probe 30 MHz up to 3 GHz

The electrode at the underside of the probe head of the RF-E 05 has a width of approx. 0.5 mm. The E-fields of clocked lines, IC pins, and smaller components are precisely located. The RF-E 05 probe was developed for Langer scanner.

The RF-E 05 is a near-field probe. It has the same structure as the RF-E 02 and RF-E 10 probes, but detects E-fields from very small ranges. The RF-E 05 is designed to detect the specific cause of an electrical interference field. For measurements the E-field probe is positioned directly onto or held above the components or surfaces of printed circuit boards.The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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RF-E 09
E-Field Probe 30 MHz up to 3 GHz

The electrode on the underside of RF-E 09 probe head detects electrical fields decoupled by ICs. The resolution of the probe enables measurements from distances of 0,5 to 10 mm above assemblies. The RF-E 09 probe was developed for Langer scanner.

The RF-E 09 is a passive near-field probe. In principle it has the same structure as the RF-E 03 and RF-E 04 probes. With its small square electrode surface, the specific source of electrical interference field can be detected. For measurements, the E-field probe is held above or positioned onto components and printed circuit boards. The upper half of the probe is electrically shielded. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E field probe has an internal terminating resistance.

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RF-E 10
E-Field Probe 30 MHz up to 3 GHz

The electrode on the lower edge of the RF-E 10 probe head has a width of approx. 0.2 mm, which can locate even the smallest E-field sources, e.g. conducting paths with a width of 0.1 mm or, single IC pins at high pin ICs.

The RF-E 10 is a passive near-field probe. It has a higher resolution than the RF-E 02 and RF-E 05 probes. Because the probe head should be positioned directly onto the measuring object (high electrical field strength), it is not suitable for measurements within high-scale ranges. This can be done using RF-E 05 and RF-E 02. The E-field probe is small and handy. It has a current attenuating steath and its upper side is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe does not have an internal terminating resistance of 50 Ω.

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The RF near field probes are suitable for RF coupling into assemblies or components.(Pay attention to the manual comliance!)The probe heads of the RF family allow the step by step identification of interference sources on an assembly. We recommend initially the detection of interference sources on assemblies by using large sensitive probes from a larger distance. Next, using higher resolution probes, the interference sources can be more precisely detected. With trained use of the near field probes field orientation and field distribution on the electronic assembly can be detected.The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.

Download Correction Characteristics

You can download the correction data for our special magnetic field probe types as xlsx-file.
RF probes
RF E-field probes

Downloads

Quality features of Langer near-field probes
Overview all near-field probes Langer EMV-Technik GmbH

The post Langer RF, Passive, Near Field Probes (30 MHz up to 3 GHz) first appeared on Westek Electronics.

]]> Langer LF, Passive, Near Field Probes (100 kHz up to 50 MHz) https://westek.com.au/langer-emv-technik-near-field-probes/ Fri, 20 Dec 2024 04:46:08 +0000 https://westek.com.au/?p=1221 The LF family consists of seven magnetic-field probes, four of which are included in our LF1 probe set. We are happy to create customized sets upon request.

The post Langer LF, Passive, Near Field Probes (100 kHz up to 50 MHz) first appeared on Westek Electronics.

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LF1 set
Near-Field Probes 100 kHz up to 50 MHz

The LF1 near-field probe set consists of four shielded near-field probes for measuring emissions of longwave, medium wave, and shortwave frequencies on electronic devices during the development process.
The probe heads of the LF1 set are designed for the incremental detection of electromagnetic interference sources at single pins, larger components, and on assemblies. First, the electromagnetic interference of the assembly is detected by the LF-R 400 probe from up to 10 cm. Probes with higher resolution like the LF-B 3, LF-U 5 and LF-U 2.5 are then used to more precisely detect any source of interference. Our near-field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probes do not have an internal terminating resistance of 50 Ω.

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LF-R 400
H-Field Probe 100 kHz up to 50 MHz

The LF-R 400 H-field probe has a large diameter (25 mm), which makes it highly sensitive and suitable for measurements within ranges up to 10 cm around assemblies and devices.

The LF-R 400 is a passive near-field probe. With its large tip diameter (25 mm), it is more sensitive and thus is able to detect a greater area of the magnetic field than the LF-R 50 (10 mm) or LF-R 3 (3 mm) near-field probes, which both have higher resolutions than the LF-R 400. This probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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LF-R 50
H-Field Probe 100 kHz up to 50 MHz

The H-field probe LF-R 50 is designed to measure assemblies, devices, or cables at a distance up to 3 cm. This allows larger components to be detected as possible sources of interference.

The LF-R 50 is a passive near-field probe.

Due to its diameter, sensitivity, and resolution the LF-R 50 functions between the ranges of the LF-R 400 and LF-R 3 near-field probes.

The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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LF-R 3
H-Field Probe 100 kHz up to 50 MHz

The LF-R 3 near-field probe detects high resolution RF magnetic fields directly on assemblies, for example, in the area around IC pins and IC cases, conducting paths, decoupling capacitor, and EMC components.

The LF-R 3 probe is a passive near-field probe. It has the same basic construction as the LF-R 50 and LF-R 400 probes. Of these three probes, the LF-R 3 has the highest resolution. This probe is suitable for measurements close to the components in the high magnetic field strength range, but should not be used for measurements from a distance.
This can be done using LF-R 400 and LF-R 50.

The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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LF-B 3
H-Field Probe 100 kHz up to 50 MHz

The measuring coil of the H-field probe LF-B 3 sits orthogonally to the shaft. Using the probe tip perpendicularly ensures its correct placement directly on the assembly or device to be measured.
This allows for use at places on the surface of printed circuit boards typically hard to access, e.g. between large components of switching controllers.

The probe LF-B 3 is a passive near-field probe. The measuring coil in the LF-B 3 probe is rotated 90° in contrast to its position in the LF-R 3 probe. The LF-B 3 detects magnetic field lines emitted from the measured object at 90°. Magnetic field lines which enter the probe laterally are not detected. The near-field probe is small and handy. It has a current attenuating sheath and is, therefore, electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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LF-U 5
H-Field Probe 100 kHz up to 50 MHz

The H-field probe LF-U 5 is specially designed for detecting magnetic fields at wide conducting paths, cables, connectors, electronic components, cables and their connectors. The probe functions like a coupling clamp.
The LF-U 5 is a passive near-field probe. To measure, the curved underside of the probe is positioned onto the surface of components. Field lines from other sources, which enter the probe straight or laterally, are also detected.
The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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LF-U 2.5
H-Field Probe 100 kHz up to 50 MHz

The H-field probe LF-U 2.5 is a near-field probe. It is designed for the selective detection of RF current in conducting paths, SMD components and IC pins. The head of the probe has a magnetically active gap with a width of approx. 0.5 mm.
The LF-U 2.5 is a near-field probe. It functions like the LF-U 5 probe. While the LF-U 5 is suitable for larger components such as cable, connectors ect., the LF-U 2.5 is designed for SMD components and pins.
When measuring, the magnetically active gap of the probe head is positioned directly onto the measured object.
The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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LF-K 7
H-Field Probe 100 kHz up to 50 MHz

The LF-K 7 near-field probe has two coils, which detect semi-circular magnetic field lines. Such magnetic field lines occur at lines, rod-like constructional components, cable connectors, and along edges of flat constuctional components. The probe functions like a coupling clamp.
The LF-K 7 is a passive near-field probe. In contrast to the LF-U 5 probe, the LF-K 7 probe does not detect field lines entering the probe head laterally.
The near-field probe detects inhomogeneous magnetic fields which enter the bottom of the probe head through one coil, curve circularly around the head and exit through the second coil. Superposed homogeneous fields are not detected by the special probe head. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.

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The LF near field probes are suitable for RF coupling into assemblies or components (Pay attention to the manual compliance!).

Download Correction Characteristics

You can download the correction data for our special magnetic field probe types as xlsx-file.
LF probes

Downloads

Quality features of Langer near-field probes
Overview all near-field probes Langer EMV-Technik GmbH

The post Langer LF, Passive, Near Field Probes (100 kHz up to 50 MHz) first appeared on Westek Electronics.

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